Method of making heterojunction bipolar transistors

Details Method of making heterojunction bipolar transistors Method of making heterojunction bipolar transistors

1990-01-22

1990-09-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437203, 437133, 437 36, 437184, 357 34, H01L 21331

Patent

active

049544578

ABSTRACT:
Heterojunction bipolar transistor technology employing in a body wherein a larger area base electrode over a buried electrode has above it a smaller area electrode, an overhang capability on the portion of the smaller area electrode that operates to mask the base layer in converting the extrinsic portion to high conductivity and assist lift-off of base contact metal such that the base contact metal is in extremely close proximity to the smaller area electrode.

REFERENCES:
patent: 4379005 (1983-04-01), Hovel et al.
patent: 4731340 (1988-03-01), Chang
patent: 4839303 (1989-06-01), Tully
patent: 4889824 (1989-12-01), Selle
patent: 4889831 (1989-12-01), Ishii
patent: 4892837 (1990-01-01), Kudo
IEEE Electron Device Letters, vol. HDL-7, No. 11, Nov. 1986, pp. 615-617, "A Fully Planar Heterojunction Bipolar Transistor" by Tully et al.
1985 IEEE IEDM Proceedings, pp. 328-331, "AlGaAs/GaAs Heterojunction Bipolar Transistors" by Izawa et al.
IEEE Electron Device Letters, vol. EDL-7 No. 12, Dec. 1986, pp. 694-696 "Emitter-Base-Collector Self-Aligned Heterojunciton Bipolar Transistors Using Wet Etching Process" by Eda et al.

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