Dry etch process for titanium-tungsten films

Details Dry etch process for titanium-tungsten films Dry etch process for titanium-tungsten films

1995-03-17

1997-03-11

Tung, T.

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

1566431, 216 41, 216 67, 216 72, 216 75, 216 79, H01L 2102

Patent

active

056097751

ABSTRACT:
A method for dry etching a composite metal film, consisting of an aluminum overlay film, a titanium--tungsten film, and a titanium underlay film, is described. The process uses an organic photoresist as a mask and features improved etch selectivity and non-tapered sidewalls. The addition of CF.sub.4, to the etching chemistry used to pattern titanium--tungsten films, increases the selectivity between the photoresist and titanium--tungsten, allowing for thinner resists to be used, and thus finer resolution to be achieved. The introduction of N2 to the etching chemistry results in a N.sub.2 containing polymer to be formed during the etching procedure, on the sidewalls of the etched structure. The polymer prevents the isotropic component of the reactive ion etching process to attack the metal structure, thus allowing for non-tapered structures to be obtained.

REFERENCES:
patent: 4375385 (1983-03-01), Halon
patent: 4917759 (1990-04-01), Fisher et al.
patent: 4980018 (1990-12-01), Mu et al.
patent: 4997520 (1991-05-01), Jucha et al.
patent: 5211804 (1993-05-01), Kobayashi

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