1986-12-17
1989-07-11
Sikes, William L.
357 2, H01L 2714, H01L 3100
Patent
active
048476692
ABSTRACT:
An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.
REFERENCES:
M. Green; "Crystalline and Polycrystalline Silkon Tandem Junction Solar Cells: Theoretical Advantages"; Solar Cells, 18(1986), 31-40 (Jul.).
Abe Masayoshi
Fukada Takeshi
Kinka Mikio
Nagayama Susumu
Shibata Katsuhiko
Ferguson Jr. Gerald J.
Holloway B. R.
Semiconductor Energy Laboratory Co,. Ltd.
Sikes William L.
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