Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-06-10
1994-03-22
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257144, H01L 31111, H01L 2974
Patent
active
052967255
ABSTRACT:
An integrated multicelled thyristor includes a plurality of main thyristor cells and a plurality of edge thyristor cells. The main thyristor cells comprise source cells located in the center or innermost portion of an integrated thyristor and the edge cells are located at the periphery. In order to insure that all thyristor cells turn off uniformly, current exporting means is provided from the source cells to the edge cells to reduce current hole crowding in the peripheral cells. The anodes of all cells are electrically connected and the cathodes of all main cells are electrically connected. However, the cathodes of the edge cells are electrically connected to one or more source cells by the current exporting means. The unit cell of the multicelled device preferably comprises a BRT, but can comprise other well known thyristor structures where turn-off is limited by hole-current crowding.
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Baliga Bantval J.
Nandakumar Mahalingam
Abraham Fetsum
North Carolina State University at Raleigh
Sikes William L.
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