Method of manufacturing semiconductor devices and product theref

Details Method of manufacturing semiconductor devices and product theref Method of manufacturing semiconductor devices and product theref

1987-04-27

1989-07-11

Brody, Christopher W.

Fishing, trapping, and vermin destroying

357 237, 437247, H01L 2978

Patent

active

048472115

ABSTRACT:
A thin film semiconductor device, for example a transistor, is fabricated by depositing layers of materials of appropriate electrical characteristics on an insulating substrate 1. To manufacture a transistor, firstly an insulating base layer 2 is applied which is then followed by a gate electrode 3, an insulation layer 4 and a semiconductor layer 5. Source and drain electrodes 6 and 7 are then applied and finally a protective layer 8 encapsulates the device. In order to improve the life of the device it is annealed firstly in a reducing atmosphere and then in an oxidizing atmosphere.

REFERENCES:
patent: 2974075 (1961-03-01), Miller
patent: 3258663 (1966-06-01), Weimer
patent: 3298863 (1967-01-01), McCusker
patent: 3349474 (1967-10-01), Rauscher
patent: 3423821 (1969-01-01), Mishimura
patent: 3460005 (1969-08-01), Kand et al.
patent: 3520051 (1970-07-01), Topter et al.
patent: 3620850 (1971-11-01), Deal
patent: 3627589 (1971-12-01), Sprague
patent: 3885993 (1975-05-01), Tihanyi
patent: 3988172 (1976-10-01), Bachmann et al.
patent: 4055444 (1977-10-01), Rao
patent: 4091527 (1978-05-01), Goodman et al.
patent: 4116719 (1978-09-01), Shimuzu et al.
patent: 4151007 (1979-04-01), Levenstein et al.
Burr, P. et al., "Single Step Anneal for Thin Film Transistors", IBM Technical Disc. Bull, vol. 22, No. 1, Jun. 1979, p. 353.
Lee, H., "A New Approach for the Floating-Gate MOS Nonvolatile Memory", Appl. Phys. Lett., vol. 31, No. 7, Oct. 1977, pp. 475-476.
Runge, H. "Threshold Voltage Shift of MOS Transistors by Ion Implantation", Electronic Engineering, Jan. 1976, pp. 41-43.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices and product theref does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices and product theref, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices and product theref will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-437050