Integrated pin photo-detector method

Fishing – trapping – and vermin destroying

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437 2, 357 30, 357 55, 357 58, B01L 2714

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048472107

ABSTRACT:
An improved means and method for forming an optical sensor within an integrated circuit structure is described. An epi-coated semiconductor wafer is masked and a cavity etched through the epi-layer to the underlying substrate. A dielectric sidewall is formed on the cavity sidewall and a substantially intrinsic semiconductor region, preferably grown by selective epitaxy, to refill the cavity. The upper surface of the intrinsic region is then heavily doped and contacted by a low resistance polysilicon layer which is substantially transparent to incoming light. The method forms a high sensitivity PIN photo-sensor having a thick space-charge region for efficient capture of the hole-electron pairs produced by the incoming light. The fabrication techniques are compatible with the processing requirements for other integrated circuit devices formed on the same chip and to which the PIN device is coupled without wire bonds, tabs, bumps or the like.

REFERENCES:
patent: 3619665 (1969-10-01), Kosonocky
patent: 3946423 (1976-03-01), Augustine
patent: 4009058 (1977-02-01), Mills
patent: 4101350 (1978-07-01), Possley et al.
patent: 4183034 (1980-01-01), Burke et al.
patent: 4243997 (1981-01-01), Natori et al.
patent: 4378460 (1983-03-01), Williams
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4400411 (1983-08-01), Yuan et al.
patent: 4543443 (1985-07-01), Moeller et al.
patent: 4680085 (1987-07-01), Vijan et al.
patent: 4695871 (1987-09-01), Tsunoda
patent: 4718063 (1988-01-01), Reedy et al.
Borland et al., "Advanced Dielectric Isolation Through Selective Epitaxial Growth Techniques" Solid State Technology, vol. 28(8), Aug., 1985, pp. 141-148.

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