Simplified current sensing structure for MOS power devices

Details Simplified current sensing structure for MOS power devices Simplified current sensing structure for MOS power devices

1989-06-07

1991-07-23

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 25, 357 28, 357 234, 357 38, 3073031, H01L 2702

Patent

active

050347969

ABSTRACT:
In a DMOS power device, a current sensing apparatus comprises bonding pads arranged in specific locations with at least one current sense pad having active cells thereon and a source pad which is separated from the current sense pad. The configuration of cells provides that sources are tied together by a metal layer, which, due to its specific resistance, forms a resistance path between the source pad and the current sense pad or more specifically between the points of contact of a Kelvin lead of the source pad and the current sense pad. The invention has the advantages that substantially the entire chip area is utilized for conduction of power currents and that internal components form a resistive path for current to voltage conversion.

REFERENCES:
patent: 4136354 (1979-01-01), Dobkin
patent: 4158807 (1979-06-01), Senturia
patent: 4783690 (1988-11-01), Walden et al.
patent: 4818895 (1989-04-01), Kaufman
patent: 4908682 (1990-03-01), Takahashi
Power Conversion and Intelligent Motion Magazine, Jul. 1987, pp. 76-83, "Current Sensing Hex Sense SMPS Designs and Lower Losses", by Sean Young.
Zommer, et al., "Power Current Mirror Devices and Their Applications", PCI '86 Proceedings, Jun. 1986, pp. 275-283.

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