Method of providing lower contact resistance in MOS transistor s

Details Method of providing lower contact resistance in MOS transistor s Method of providing lower contact resistance in MOS transistor s

1992-12-02

1994-03-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437131, 437132, 437 34, 257281, 257409, 257410, 148DIG58, 148DIG59, H01L 21265

Patent

active

052963870

ABSTRACT:
Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming a germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.

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