Field-effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 231, 357 54, 357 65, 357 67, 357 71, H01L 2978, H01L 2934, H01L 2348

Patent

active

050347926

ABSTRACT:
A field-effect transistor wherein a gate electrode conductive layer is connected in parallel to a plurality of conductive layers having a lower resistivity than the gate electrode conductive layer, so that the gate resistance is reduced to provide a high power output and a noise reduction.

REFERENCES:
patent: 4546535 (1985-10-01), Shepard
patent: 4660067 (1987-04-01), Ebina
patent: 4753709 (1988-12-01), Welch et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-436282

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.