MOS transistor with semi-insulating field plate and surface-adjo

Details MOS transistor with semi-insulating field plate and surface-adjo MOS transistor with semi-insulating field plate and surface-adjo

1990-08-01

1991-07-23

Hille, Rolf

357 233, 357 234, 357 52, H01C 2968, H01C 2910, H01C 2934

Patent

active

050347900

ABSTRACT:
A lateral MOS transistor includes a semi-insulating field plate adjacent the surface of the device, over the drift region and extending laterally from the drain electrode toward the gate and source electrodes of the transistor. The field plate is connected at one end to the drain electrode, and at the other end to either the gate electrode of the source electrode. In order to improve the turn-on characteristics of the transistor, a surface-adjoining semiconductor top layer is provided in the drift region of the device, between the channel region and the drain region. This top layer is connected to the channel region at selected locations, and serves to improve device turn-on performance by causing a more rapid decrease in ON resistance at turn-on.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4831423 (1989-05-01), Shannon
patent: 4866495 (1989-09-01), Kinzen

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