Structure and fabrication method for a double trench memory cell

Details Structure and fabrication method for a double trench memory cell Structure and fabrication method for a double trench memory cell

Filed on

1990-06-28

Date issued

1991-07-23

Examiner

Jackson, Jr., Jerome

Other Related Categories

357 234, 357 51, 357 55, 357 41, H01L 2978, H01L 2906

Type

Patent

Status

active

Patent number

050347870

Description

ABSTRACT:
A method is described for fabricating a novel double trench memory structure including a shallow trench access transistor adjacent to a deep trench storage capacitor. The described three-dimensional DRAM cell structure consists of shallow trench access transistors and deep trench storage capacitors in a n-well disposed on a semiconductor substrate. In the fabrication method, the vertical access transistors are built adjacent to the one side of one deep substrate-plate trench storage capacitor. Arrangement of the access transistors and trench storage capacitor are different from that of standard single trench cells. The layout of the double trench cell not only provides the advantages of small size, high packing density, lower soft error rate, and higher noise immunity for storage capacitor, but also leads to better performance and an efficient sensing scheme. The structure may be fabricated for p-channel or n-channel embodiments.

REFERENCES:
patent: 4649625 (1987-03-01), Lu
patent: 4672410 (1987-06-01), Miura et al.
patent: 4713678 (1987-12-01), Womack et al.
patent: 4728623 (1988-03-01), Lu et al.
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4769786 (1988-09-01), Garnache et al.
patent: 4786954 (1988-11-01), Morie et al.
patent: 4791463 (1988-12-01), Malhi
patent: 4797373 (1989-01-01), Malhi et al.
patent: 4801988 (1989-01-01), Kenney
patent: 4873560 (1989-10-01), Sunami et al.
patent: 4916524 (1990-04-01), Teng et al.

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