Process for forming a feature on a substrate without recessing t

Details Process for forming a feature on a substrate without recessing t Process for forming a feature on a substrate without recessing t

1990-10-01

1991-07-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 41, 437180, 437183, 437186, 437233, 437912, 437913, 148DIG50, H01L 21465

Patent

active

050343513

ABSTRACT:
A process for forming a feature on a substrate without etching into the surface of the substrate and causing recessed regions. A first layer of material is deposited to overlie the substrate and is formed of a different material to the substrate. The first layer is patterned, using conventional photolithography, to form windows in the first layer of material which expose a substrate surface. The etch selectively etches the first layer of material without substantially etching into the substrate material. A second layer of material, which is the same material as the substrate, is deposited to overlie the first layer of material and makes physical contact with the substrate through the windows patterned in the first layer. The second layer is blanket etched so that isolated regions are formed in regions defined by the windows patterned in the first layer.

REFERENCES:
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patent: 4927776 (1990-05-01), Soejima
patent: 4968646 (1990-11-01), Blanchard et al.
patent: 4975382 (1990-12-01), Takasugi
patent: 4997778 (1991-03-01), Sim et al.
S. Wolf and R. W. Tauber, Silicon Processing for the VLSI Era, Sunset Beach, Calif. 1986, vol. 1-Process Technology, pp. 155-156.

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