Method of making a surface emitting semiconductor laser

Details Method of making a surface emitting semiconductor laser Method of making a surface emitting semiconductor laser

1990-06-18

1991-07-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156649, H01L 21306, H01L 21329, H01L 2180, H01L 29205

Patent

active

050343440

ABSTRACT:
A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

REFERENCES:
patent: 4309670 (1982-01-01), Burnham et al.
patent: 4675876 (1987-06-01), Suilans
High Efficiency TEMoo Continuous Wave (Al,Ga) As Epitaxial Surface Emitting Laser P. L. Gourley, et al., Appl. Phy. Lett., vol. 54, No. 13, Mar. 27, 89 pp. 1209-1211.
Effects of Ion Species and Adsorb Gas on Dry Etching Induced Damage on GaAs. S. W. Pang, et al., J. Vac. Soc. Tech. B, vol. 13, No. 1 Jan./Feb. 85, pp. 398-401.
Delta Doped Ohmie Contacts to n-GaAs E. F. Schubert, et al., Appl. Phys. Lett., Aug. 4, 86 49(5).
Distributed Feedback Surface Emitting Laser Diode with Multilayers Heterostructure Mutsuo Ogura, et al., Jap. J. of Appl. Phys. 23(7) Jul. 84, pp. L512-L514.
T. Sakaguchi et al., "Vertical Cavity Surface-Emitting Laser with an AlGaAs/AlAs Bragg Reflector," Electronics Letters, 1988, vol. 24, pp. 928-929.
J. L. Jewell et al., "GaAs-AlAs Monolithic Microresonator Arrays," Applied Physics Letters, 1987, vol. 51, pp. 94-96.
J. L. Jewell et al., "Lasting Characteristics of GaAs Microresonators," Applied Physics Letters, 1989, vol. 54, pp. 1400-1402.
C. K. Peng et al., "Extremely Low Resistance Nonalloyed Ohmic Contacts in GaAs Using InAs/InGaAs and InAs/GaAs Strained-Layer Sueprlattices," Applied Physics Letters, 1988, vol. 53, pp. 900-901.
S. Kinoshita et al., "Reproducible Fabrication of AlGaAs/GaAs Circular Buried Heterostructure (CBH) Surface-Emitting Lasers with Low Thresholds," Electronics Letters, 1988, vol. 24, pp. 699-700.
K. Iga et al., "Surface Emitting Semiconductor Laser Array: Its Advantage and Future," Journal of Vacuum Science Technology A, 1989, vol. 7, pp. 842-846.
A. Scherer et al., "Electrical Damage Induced by Ion Beam Etching of GaAs," Journal of Vacuum Science Technology B, 1988, vol. 6, pp. 277-279.
C. J. Sandroff et al., "Electronic Passivation of GaAs Surfaces Through the Formation of Arsenic-Sulfur Bonds," Applied Physics Letters, 1989, vol. 54, pp. 362-364.
A. Ibaraki et al., "Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) Under Room Temperature CW Conditions," Japanese Journal of Applied Physics, 1989, vol. 28, pp. L667-L668.

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