Deposition of Ta- or Nb-doped high-k films

Details Deposition of Ta- or Nb-doped high-k films Deposition of Ta- or Nb-doped high-k films

2008-04-07

2011-12-06

Meeks, Timothy (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

C427S255110, C427S255150, C427S255190, C427S255230

Reexamination Certificate

active

08071163

ABSTRACT:
Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

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