Laser diode with improved heat dissipation

Details Laser diode with improved heat dissipation Laser diode with improved heat dissipation

2008-03-03

2011-12-06

Van Roy, Tod T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S034000

Reexamination Certificate

active

08073031

ABSTRACT:
A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.

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Kneissl et al.; “Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates”; American Institute of Physics; Sep. 2000; vol. 77, No. 13; pp. 1931-1933.
Japanese Office Action for corresponding Japanese Application No. 2009-049656 mailed Mar. 1, 2011 and English translation.

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