Dual metric OPC

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S050000

Reexamination Certificate

active

08084169

ABSTRACT:
A technique for creating mask layout data to print a desired pattern of features via a photolithographic process includes defining one or more subresolution assist features (SRAFs) and performing OPC on printing features and the added SRAF features.

REFERENCES:
patent: 4532650 (1985-07-01), Wihl et al.
patent: 4762396 (1988-08-01), Dumant et al.
patent: 4989156 (1991-01-01), Ikenaga
patent: 5396584 (1995-03-01), Lee et al.
patent: 5502654 (1996-03-01), Sawahata
patent: 5655110 (1997-08-01), Krivokapic et al.
patent: 5699447 (1997-12-01), Alumot et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5886908 (1999-03-01), Conn et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 6016357 (2000-01-01), Neary et al.
patent: 6033814 (2000-03-01), Burdorf et al.
patent: 6042257 (2000-03-01), Tsudaka
patent: 6049660 (2000-04-01), Ahn et al.
patent: 6056785 (2000-05-01), Chisaka
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6080527 (2000-06-01), Huang et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6128067 (2000-10-01), Hashimoto
patent: 6187483 (2001-02-01), Capodieci et al.
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249904 (2001-06-01), Cobb
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6301697 (2001-10-01), Cobb
patent: 6312854 (2001-11-01), Chen et al.
patent: 6317859 (2001-11-01), Papadopoulou
patent: 6370679 (2002-04-01), Chang et al.
patent: 6415421 (2002-07-01), Anderson et al.
patent: 6416907 (2002-07-01), Winder et al.
patent: 6425113 (2002-07-01), Anderson et al.
patent: 6425117 (2002-07-01), Pasch et al.
patent: 6430737 (2002-08-01), Cobb et al.
patent: 6453452 (2002-09-01), Chang et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6467076 (2002-10-01), Cobb
patent: 6470489 (2002-10-01), Chang et al.
patent: 6487503 (2002-11-01), Inui
patent: 6499003 (2002-12-01), Jones et al.
patent: 6574784 (2003-06-01), Lippincott et al.
patent: 6601231 (2003-07-01), LaCour
patent: 6620561 (2003-09-01), Winder et al.
patent: 6643616 (2003-11-01), Granik et al.
patent: 6649309 (2003-11-01), Mukherjee
patent: 6665845 (2003-12-01), Aingaran et al.
patent: 6668367 (2003-12-01), Cobb et al.
patent: 6728946 (2004-04-01), Schellenberg et al.
patent: 6748578 (2004-06-01), Cobb
patent: 6778695 (2004-08-01), Schellenberg et al.
patent: 6792159 (2004-09-01), Aufrichtig et al.
patent: 6792590 (2004-09-01), Pierrat et al.
patent: 6815129 (2004-11-01), Bjorkholm et al.
patent: 6817003 (2004-11-01), Lippincott et al.
patent: 6851103 (2005-02-01), Van Den Broeke et al.
patent: 6857109 (2005-02-01), Lippincott
patent: 6862726 (2005-03-01), Futatsuya et al.
patent: 6887633 (2005-05-01), Tang
patent: 6901576 (2005-05-01), Liebmann et al.
patent: 6928634 (2005-08-01), Granik et al.
patent: 6973633 (2005-12-01), Lippincott et al.
patent: 6989229 (2006-01-01), Lucas et al.
patent: 7010776 (2006-03-01), Gallatin et al.
patent: 7013439 (2006-03-01), Robles et al.
patent: 7017141 (2006-03-01), Anderson et al.
patent: 7024655 (2006-04-01), Cobb
patent: 7028284 (2006-04-01), Cobb et al.
patent: 7047516 (2006-05-01), Futatsuya
patent: 7073162 (2006-07-01), Cobb et al.
patent: 7155689 (2006-12-01), Pierrat et al.
patent: 7155699 (2006-12-01), Cobb
patent: 7172838 (2007-02-01), Maurer et al.
patent: 7181721 (2007-02-01), Lippincott et al.
patent: 7237221 (2007-06-01), Granik et al.
patent: 7240305 (2007-07-01), Lippincott
patent: 7240321 (2007-07-01), Cobb et al.
patent: 7266803 (2007-09-01), Chou et al.
patent: 7281234 (2007-10-01), Lippincott
patent: 7293249 (2007-11-01), Robles et al.
patent: 7324930 (2008-01-01), Cobb
patent: 7367009 (2008-04-01), Cobb et al.
patent: 7378202 (2008-05-01), Granik et al.
patent: 7382168 (2008-06-01), Bhattacharya et al.
patent: 7392168 (2008-06-01), Granik et al.
patent: 7799487 (2010-09-01), Hamouda
patent: 2002/0026626 (2002-02-01), Randall et al.
patent: 2002/0094680 (2002-07-01), Lin
patent: 2002/0199157 (2002-12-01), Cobb
patent: 2003/0170551 (2003-09-01), Futatsuya
patent: 2003/0208728 (2003-11-01), Pierrat
patent: 2004/0005089 (2004-01-01), Robles et al.
patent: 2004/0044431 (2004-03-01), Pellegrini et al.
patent: 2004/0088149 (2004-05-01), Cobb
patent: 2005/0050490 (2005-03-01), Futatsuya et al.
patent: 2005/0053848 (2005-03-01), Wampler et al.
patent: 2005/0149900 (2005-07-01), Laidig
patent: 2005/0149901 (2005-07-01), Tang
patent: 2005/0251771 (2005-11-01), Robles
patent: 2005/0278686 (2005-12-01), Word et al.
patent: 2006/0188796 (2006-08-01), Word
patent: 2006/0190850 (2006-08-01), Kohle et al.
patent: 2006/0199084 (2006-09-01), Word
patent: 2006/0200790 (2006-09-01), Shang et al.
patent: 2006/0240342 (2006-10-01), Tang
patent: 2006/0269875 (2006-11-01), Granik
patent: 2006/0271905 (2006-11-01), Mukherjee et al.
patent: 2007/0006113 (2007-01-01), Hu et al.
patent: 2007/0074143 (2007-03-01), Cobb et al.
patent: 2007/0118826 (2007-05-01), Lippincott
patent: 2007/0124708 (2007-05-01), Robles et al.
patent: 2007/0198963 (2007-08-01), Granik et al.
patent: 2007/0204242 (2007-08-01), Brunet et al.
patent: 2007/0204256 (2007-08-01), Brunet et al.
patent: 2007/0277145 (2007-11-01), Scaman
patent: 2008/0141195 (2008-06-01), Robles et al.
patent: 2008/0148217 (2008-06-01), Park
patent: 2008/0166639 (2008-07-01), Park et al.
patent: 09-319067 (1997-12-01), None
patent: 2004-502961 (2004-01-01), None
patent: WO 99/14637 (1999-03-01), None
patent: WO 99/14638 (1999-03-01), None
patent: WO 01/65315 (2001-09-01), None
patent: WO 2006/127438 (2006-11-01), None
Adam, K., et al., “Improved Modeling Performance with an Adapted Vectorial Formulation of the Hopkins Imaging Equation,”Proceedings of SPIE, vol. 5040: Optical Microlithography XVI, Santa Clara, Calif., Feb. 25, 2003, pp. 78-91.
Bailey, G., et al., “Intensive 2D SEM Model Calibration for 45nm and Beyond,”Proceedings of SPIE, vol. 6154: Optical Microlithography XIX, San Jose, Calif., Feb. 21, 2006, 61542W.
Barouch et al., “Illuminator Optimization for Projection Printing,”Proc. SPIE, vol. 3679, pp. 697-703 (1999).
Brist et al., “Illumination Optimization Effects on OPC and MDP,”Proc. SPIE, vol. 5754, pp. 1179-1189 (2005).
Brist, T., et al., “Model-Assisted Placement of Sub-Resolution Assist features: Experimental Results,”Proceedings of SPIE, vol. 5042: Design and Process Integration for Microelectronic Manufacturing, Santa Clara, Calif. Feb. 27, 2003, pp. 99-106.
Brist et al., “Source Polarization and OPC Effects on Illumination Optimization,”Proceedings of SPIE, 25th Annual BACUS Symposium on Photomask Technology, vol. 5992, pp. 599232-1/9 (2005).
Brist, T., “Using Grid-based OPC Verification at the 65-nm node and below,” MicroMagazine.com. <http://www.micromagazine.com/archive/06/01/brist.html> 2006.
Broeke et al., “Near 0.3 k1 Full Pitch Range Contact Hole Patterning Using Chromeless Phase Lithography (CPL),”Proc. of SPIE, vol. 5256, pp. 297-308 (2003).
Brueck, S., et al., “Spatial Frequency Analysis of Optical Lithography Resolution Enhancement Techniques,”Proceedings of SPIE, vol. 3679: Optical Microlithography XII, Santa Clara, Calif., Mar. 17, 1999, pp. 715-725.
Cao et al., “Standard Cell Characterization Considering Lithography Induced Variations,”Design Automation Conference, 43rdACM/IEEE, pp. 801-804 (2006).
Chang et al., “A computational method for the correction of proximity effect inelectron-beam lithography,”SPIE, vol. 1671, pp. 208-214 (1992).
Chen et al., “An Automated and Fast OPC Algorithm for OPC-Aware Layout Design,”Int'l Symp. on Quality Electronic Design, pp. 782-787 (2007).
Chen et al., “RET Masks for the Final Frontier of Optical Lithography,”Proc. SPIE, vol. 5853, pp. 168-179 (2005).
Cobb, N., and A. Zakhor, “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model,

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dual metric OPC does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual metric OPC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual metric OPC will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4313985

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.