MOS low power sensor with sacrificial membrane

Details MOS low power sensor with sacrificial membrane MOS low power sensor with sacrificial membrane

2008-05-13

2011-12-13

Smith, Matthew (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

C438S717000, C438S734000, C257SE21217

Reexamination Certificate

active

08076245

ABSTRACT:
A metal oxide semiconductor (MOS) device includes a substrate, a lower sacrificial membrane adjacent to the substrate, an upper thin film structure adjacent to the lower membrane, and a MOS material deposited on the upper thin film structure.

REFERENCES:
patent: 2002/0102753 (2002-08-01), Johnson et al.
patent: 2005/0072924 (2005-04-01), Wood et al.
patent: 2006/0249384 (2006-11-01), Kim et al.

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