Method of manufacturing image sensors

Details Method of manufacturing image sensors Method of manufacturing image sensors

1990-09-07

1991-12-24

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 50, 437 51, 437101, 357 30, 357 237, 357 2, 357 4, H01L 2714

Patent

active

050752448

ABSTRACT:
An image sensor manufacturing method, in which a chromium layer or the tantalum layer as barrier metal is formed on the semiconductor layer as the ohmic contact layer of the thin film transistor switching element (TFT). With use of the chromium layer or the tantalum layer, the semiconductor layers of an n.sup.+ hydrogenated amorphous silicon (n.sup.+ a-Si:H) can be protected when metal, e.g., aluminum, is vapor deposited or deposited by the sputtering method. Accordingly, the characteristic of the semiconductor layers can be kept intact, and consequently the reliability of the image sensor is improved. Further, when the chromium layer or the tantalum layer as barrier metal is formed, the lower electrode portion of the photo detect element is formed using the same layer, in the same photolithograph process. Accordingly, the manufacturing of image sensors is simpler than that of the same in which the photo detect elements and the TFTs are formed in different process steps.

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