Solid-state image-sensing device

Details Solid-state image-sensing device Solid-state image-sensing device

2008-05-08

2011-12-06

Choi, William (Department: 2873)

Television

Camera, system and detail

Solid-state image sensor

Reexamination Certificate

active

08072524

ABSTRACT:
A solid-state image-sensing device has a MOS transistor (T1) connected to a photodiode PD (PD) and performing photoelectric conversion, and has, as an integrating circuit for amplifying and integrating the photoelectric current obtained by the photoelectric conversion, a MOS transistor T2and a capacitor C. In the solid-state image-sensing device, integration operation is controlled by a MOS transistor T6connected to the gate of the MOS transistor T2.

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patent: 3-192764 (1991-08-01), None
patent: 2002-300476 (2002-10-01), None
patent: 2006-50544 (2006-02-01), None

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