Thermoelectric material and thermoelectric element

Batteries: thermoelectric and photoelectric – Thermoelectric – Having particular thermoelectric composition

Reexamination Certificate

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C136S236100, C136S240000

Reexamination Certificate

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08067686

ABSTRACT:
Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure:in-line-formulae description="In-line Formulae" end="lead"?(Tia1Zrb1Hfc1)xNiySn100-x-y  composition formula (1);in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?(Lnd(Tia2Zrb2Hfc2)1-d)xNiySn100-x-y  composition formula (2);in-line-formulae description="In-line Formulae" end="tail"?(wherein a1, b1, c1, x and y satisfy the conditions of: 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35 and 30≦y≦35, and Ln is at least one element selected from the group consisting of Y and rare earth elements, and a2, b2, c2 and d satisfy the conditions of: 0≦a2≦1, 0≦b2≦1, 0≦c2≦1, a2+b2+c2=1 and 0<d≦0.3).

REFERENCES:
patent: 6700052 (2004-03-01), Bell
patent: 2001-189495 (2001-07-01), None
patent: 2002-33527 (2002-01-01), None
Shen, Q., Zhang, L. M., Chen, L. D., Goto, T. and Hirai, T., Synthesis and Sintering of ZrNiSn Thermoelectric Compounds, 21st International Conference on Thermoelectrics, Aug. 25-29, 2002, pp. 166-169.
H. Hohl, et al., J. Phys.: Condens., matter 11, pp. 1697-1709, “Efficient Dopants for ZrNiSn-Based Thermoelectric Materials”, 1999.
K. Mastronardi, et al., Applied Physics Letters, vol. 74, No. 10, pp. 1415-1417, “Antimonides With the Half-Heusler Structure: New Thermoelectric Materials”, Mar. 8, 1999.
U.S. Appl. No. 10/105,341, filed Mar. 26, 2002, Shutoh et al.
U.S. Appl. No. 10/958,376, filed Oct. 6, 2004, Shutoh et al.
S. Sportouch, et al., “Thermoelectric Properties of Half-Heusler Phases:ErNi-1-x,CuxSb, YNi-xCuxSb and ZrxHfyTizNiSn”, 18thInternational Conference on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 344-347.
S. J. Poon, et al., “Bandgap Features and Thermoelectric Properties of Ti-Based Half-Heusler Alloys” 18thInternational Conferences on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 45-51.
C. Uher, et al., “Thermoelectric Properties of Bi-Doped Half-Heusler Alloys”, 18thInternational Conference on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 56-59.
S. Bhattacharya, et al., “Thermoelectric Properties of Sb-Doping in the TiNiSn1xSbxHalf-Heusler System”, 18thInternational Conference on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 336-339.
Y. Xia, et al., “Thermoelectric Properties of semimetallic (Zr, Hf)CoSb half-Heusler phases”, Journal of Applied Physics, vol. 88, No. 4, Aug. 15, 2000, pp. 1952-1955.
S. Bhattacharya, et al., “Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx”; Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2476-2478.
Q. Shen, et al., “Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds”, Applied Physics Letters, vol. 79, No. 25, Dec. 17, 2001, pp. 4165-4167.
Qiang Shen, et al., “Thermoelectric Properties of ZrNiSn-based half-Heusler compounds by solid state reaction method”, Journal of Materials Science Letters, vol. 20, No. 24, Dec. 2001, pp. 2197-2199.
S. Joseph Poon, et al., “Electronic and Thermoelectric Properties of Half-Heusler Alloys”, Semiconductors and Semimetals, Academic Press, vol. 70, 2001, pp. 37-75.
Shen Qiang, et al., Synthesis and Thermoelectric Properties of ZrNiSn-based Semi-Heusler Compounds, Preprints of Annual Meeting of the Ceramic Society of Japan, Mar. 21, 2001, p. 285.

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