Method of manufacturing semiconductor device with lower...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S608000, C438S650000, C257SE21012

Reexamination Certificate

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08062950

ABSTRACT:
A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.

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