Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2009-01-26
2011-12-13
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S031000, C438S691000, C438S694000, C385S129000, C385S130000, C385S131000, C385S132000, C216S024000, C216S089000, C216S095000
Reexamination Certificate
active
08076246
ABSTRACT:
A method comprises a first multilayer body forming step of forming a first multilayer body on a first cladding layer, the first multilayer body including a core layer and a first polishing stop layer in order from the first cladding layer side; a first multilayer body patterning step of pattering the first multilayer body, so as to expose the first cladding layer about the patterned first multilayer body; a second multilayer body forming step of forming a second multilayer body on the exposed first cladding layer and patterned first multilayer body, the second multilayer body including a second cladding layer and a second polishing stop layer in order from the first cladding layer side; and a removing step of polishing away a part of the second multilayer body formed on the first multilayer body.
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Shimazawa Koji
Tanaka Kosuke
Lu Jiong-Ping
Oliff & Berridg,e PLC
TDK Corporation
Vinh Lan
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