Method of manufacturing thermally assisted magnetic head

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S031000, C438S691000, C438S694000, C385S129000, C385S130000, C385S131000, C385S132000, C216S024000, C216S089000, C216S095000

Reexamination Certificate

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08076246

ABSTRACT:
A method comprises a first multilayer body forming step of forming a first multilayer body on a first cladding layer, the first multilayer body including a core layer and a first polishing stop layer in order from the first cladding layer side; a first multilayer body patterning step of pattering the first multilayer body, so as to expose the first cladding layer about the patterned first multilayer body; a second multilayer body forming step of forming a second multilayer body on the exposed first cladding layer and patterned first multilayer body, the second multilayer body including a second cladding layer and a second polishing stop layer in order from the first cladding layer side; and a removing step of polishing away a part of the second multilayer body formed on the first multilayer body.

REFERENCES:
patent: 6949392 (2005-09-01), Gill et al.
patent: 2002/0092824 (2002-07-01), Sun et al.
patent: 2005/0190496 (2005-09-01), Hamann et al.
patent: 2006/0132983 (2006-06-01), Osugi et al.
patent: 2008/0145524 (2008-06-01), Guthrie et al.
patent: 2008/0310808 (2008-12-01), Fried et al.
patent: A-2007-257753 (2007-10-01), None

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