Method of making pillars using photoresist spacer mask

Details Method of making pillars using photoresist spacer mask Method of making pillars using photoresist spacer mask

2008-10-27

2011-12-20

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S286000, C438S297000, C438S669000, C438S671000, C438S689000, C257SE21038

Reexamination Certificate

active

08080443

ABSTRACT:
A method of making a device includes forming a first hard mask layer over an underlying layer, forming first features over the first hard mask layer, forming a first spacer layer over the first features, etching the first spacer layer to form a first spacer pattern and to expose top of the first features, removing the first features, patterning the first hard mask using the first spacer pattern as a mask to form first hard mask features, removing the first spacer pattern. The method also includes forming second features over the first hard mask features, forming a second spacer layer over the second features, etching the second spacer layer to form a second spacer pattern and to expose top of the second features, removing the second features, etching the first hard mask features using the second spacer pattern as a mask to form second hard mask features, and etching at least part of the underlying layer using the second hard mask features as a mask.

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