Program method of nonvolatile memory device

Details Program method of nonvolatile memory device Program method of nonvolatile memory device

2009-01-29

2011-11-01

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185250, C365S185170, C365S185130

Reexamination Certificate

active

08050098

ABSTRACT:
A program method of nonvolatile memory devices, which can solve an under program problem by preventing a drop of a verify voltage in the program, and verify operations. According to an aspect of the method, a program operation is performed on a selected memory cell block. Electric charges charged to a channel of memory cell strings included in unselected memory cell blocks are discharged. A verify operation is performed on the selected memory cell block.

REFERENCES:
patent: 7719891 (2010-05-01), Lim
patent: 2009/0161437 (2009-06-01), Pyeon et al.
patent: 1020070004295 (2007-01-01), None
patent: 1020080038924 (2008-05-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Mar. 25, 2010.
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Oct. 22, 2009.

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