Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including diode
Reexamination Certificate
2008-11-26
2011-12-20
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including diode
C438S237000
Reexamination Certificate
active
08080460
ABSTRACT:
Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
REFERENCES:
patent: 3651384 (1972-03-01), Waters et al.
patent: 4009481 (1977-02-01), Reindl
patent: 6127251 (2000-10-01), Gardener et al.
patent: 6350628 (2002-02-01), Cheng et al.
patent: 7160745 (2007-01-01), Ulmer et al.
patent: 2002/0020053 (2002-02-01), Fonash et al.
patent: 2002/0113321 (2002-08-01), Siniaguine
patent: 2004/0201057 (2004-10-01), Lien et al.
patent: 2005/0062074 (2005-03-01), Lung
patent: 2007/0040957 (2007-02-01), Chou
patent: 2008/0169464 (2008-07-01), Gong et al.
patent: 2009/0315074 (2009-12-01), Wang et al.
patent: 59171174 (1984-09-01), None
patent: 1154034 (1989-06-01), None
patent: 6302608 (1994-10-01), None
patent: PCTUS2009062358 (2010-06-01), None
Sandhu Gurtej S.
Srinivasan Bhaskar
Lee Jae
Micro)n Technology, Inc.
Richards N Drew
Wells St. John P.S.
LandOfFree
Methods of forming diodes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming diodes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4307145