Method of making monolithic integrated optoelectronic modules

Details Method of making monolithic integrated optoelectronic modules Method of making monolithic integrated optoelectronic modules

1990-03-02

1991-12-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 41, 437 31, 437 59, 437 90, 437129, H01L 2170

Patent

active

050752391

ABSTRACT:
A method of making monolithic integrated optoelectronic modules in which passivation and electric isolation of the individual components are achieved with an epitaxially deposited, semi-insulating (SI) indium phosphide layer. Instead of a semi-insulating substrate, a conducting substrate can therefore be used, which results in a better lattice structure of the deposited layers.

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patent: 4566171 (1986-01-01), Nelson et al.
patent: 4774205 (1988-09-01), Choi et al.
patent: 4891093 (1990-01-01), Smith
patent: 4940672 (1990-07-01), Zavracky
Ferry, Gallium Arsenide Technology, Howard W. Sanas Inc., Indianapolis, Ind., U.S.A., 1985, pp. 382-384.

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