Process of making a high photosensitive depletion-gate thin film

Details Process of making a high photosensitive depletion-gate thin film Process of making a high photosensitive depletion-gate thin film

1990-07-26

1991-12-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 43, 437101, 437181, 148DIG1, 148DIG150, 357 237, H01L 21441

Patent

active

050752375

ABSTRACT:
Disclosed is a process for making a thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has an accumulation gate on the bottom of the active semiconductor layer and a transparent depletion gate on the top of the active semiconductor layer. The gate length of the depletion gate is smaller than that of the accumulation gate.

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Wu, B. S., et al., "Amorphous Silicon Phototransistor on a Glass Substrate", IEEE Trans. on Electron Devices, vol. ED-32, No. 11, Nov. 1985, pp. 49-53.

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