Insulated gate bipolar transistor (IGBT) electrostatic...

Details Insulated gate bipolar transistor (IGBT) electrostatic... Insulated gate bipolar transistor (IGBT) electrostatic...

2009-01-23

2011-11-01

Stark, Jarrett (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

C257S517000, C257S525000, C257S557000, C257S575000, C257SE51004

Reexamination Certificate

active

08049307

ABSTRACT:
Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A P+doped drain region is disposed in the high-V N-well. A P+diffused region and an N+doped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the N+doped source region and the other end extending over the insulation region.

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patent: 2008/0135972 (2008-06-01), Ikuta et al.
patent: 2008/0166845 (2008-07-01), Darwish
patent: 2008/0191316 (2008-08-01), Lee
patent: 1851923 (2006-10-01), None
patent: 101145580 (2008-03-01), None
patent: 2005005596 (2005-01-01), None

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