Method for depositing silicon carbide non-single crystal semicon

Details Method for depositing silicon carbide non-single crystal semicon Method for depositing silicon carbide non-single crystal semicon

1985-01-22

1986-01-14

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 531, 427 541, B05D 306

Patent

active

045645337

ABSTRACT:
A method of forming a silicon carbide non-single crystal semiconductor, characterized in that said method comprises the step of: applying electric or light energy to a methylsilane expressed by the formula of SiH.sub.4-n (CH.sub.3).sub.n (where n=1 to 3) or Si.sub.2 (CH.sub.3).sub.n H.sub.6-n (where n=1 to 5) and a silane hydride (of Si.sub.m H.sub.2m+2, where m=1 to 3), thereby forming a silicon carbide non-single crystal semiconductor film layer containing Si.sub.x C.sub.1-x (where 0<x<1) as a major component thereof.

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