Semiconductor laser

Details Semiconductor laser Semiconductor laser

1995-09-20

1996-12-10

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, 437129, H01S 319

Patent

active

055838804

ABSTRACT:
A semiconductor comprising: a current blocking layer made of gallium nitride type compound; an active layer comprising a semiconductor made of gallium nitride type compound; an upper cladding layer and lower cladding layer made of gallium nitride compound wherein the active layer is provided between the upper and lower clad layers; wherein a stripe groove functioning as a current path is formed in said current blocking layer within at least one layer of the upper and lower clad layers.

REFERENCES:
patent: 4408217 (1983-10-01), Kobayashi et al.
patent: 4567060 (1986-01-01), Hayakawa et al.
patent: 4890293 (1989-12-01), Taneya et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5210767 (1993-05-01), Arimoto et al.
patent: 5218613 (1993-06-01), Serreze
patent: 5432808 (1995-07-01), Hatano et al.
Abstract of Japanese Patent Publ. No. 02-129915, dated May 7, 1992.

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-430213