Method for fabricating PIP capacitor

Details Method for fabricating PIP capacitor Method for fabricating PIP capacitor

2009-12-07

2011-10-18

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S381000, C438S382000, C257S296000, C257SE21004, C257SE21008, C257SE29342

Reexamination Certificate

active

08039355

ABSTRACT:
A PIP capacitor and methods thereof. A method of fabricating a PIP capacitor may include forming a field oxide film over a silicon substrate to define a device isolating region and/or an active region. A method of fabricating a PIP capacitor may include forming a lower polysilicon electrode having doped impurities on and/or over an field oxide film. A method of fabricating a PIP capacitor may include performing an oxidizing step to form a first oxide film over a polysilicon and/or a second oxide film on and/or over an active region. A method of fabricating a PIP capacitor may include forming an upper polysilicon electrode on and/or over a region of a first oxide film and forming a gate electrode on and/or over a second oxide film at substantially the same time. A method of fabricating a PIP capacitor may include forming a polysilicon resistor. A PIP capacitor is disclosed.

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