Semiconductor device having pad structure for preventing and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

08067838

ABSTRACT:
A semiconductor device having a pad structure for preventing a stress of a silicon nitride film. The semiconductor device includes a semiconductor substrate, a lower structure formed on the semiconductor substrate, a first insulation film formed on the lower structure, a first metal layer coupled to the lower structure through a first metal contact in the first insulation film, a second metal layer formed on the first metal layer, and a plurality of dummy gates having a concentric square structure formed at the lower portion of the pad region on the second metal layer.

REFERENCES:
patent: 4767724 (1988-08-01), Kim et al.
patent: 5300814 (1994-04-01), Matsumoto et al.
patent: 5394013 (1995-02-01), Oku et al.
patent: 5500558 (1996-03-01), Hayashide
patent: 5798298 (1998-08-01), Yang et al.
patent: 5811352 (1998-09-01), Numata et al.
patent: 5998249 (1999-12-01), Liaw et al.
patent: 6150689 (2000-11-01), Narui et al.
patent: 6313537 (2001-11-01), Lee et al.
patent: 6384464 (2002-05-01), Shin
patent: 6664642 (2003-12-01), Koubuchi et al.
patent: 6717267 (2004-04-01), Kunikiyo
patent: 6731007 (2004-05-01), Saito et al.
patent: 6780757 (2004-08-01), Suzuki et al.
patent: 6794248 (2004-09-01), Hashimoto et al.
patent: 7023090 (2006-04-01), Huang et al.
patent: 7183624 (2007-02-01), Ipposhi
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2002/0003305 (2002-01-01), Umakoshi et al.
patent: 2002/0036335 (2002-03-01), Minami
patent: 2003/0148625 (2003-08-01), Ho et al.
patent: 2005/0012153 (2005-01-01), Ipposhi
patent: 2005/0082577 (2005-04-01), Usui
patent: 2006/0038233 (2006-02-01), Otsuki
patent: 2007/0138557 (2007-06-01), Ipposhi
patent: 10-247664 (1998-09-01), None
patent: 1020020058235 (2002-07-01), None
patent: 1020030025061 (2003-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having pad structure for preventing and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having pad structure for preventing and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having pad structure for preventing and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4297615

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.