Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1975-12-04

1977-03-15

Wojciechowicz, Edward J.

357 36, 357 46, 357 52, H01L 2972, H01L 2702, H01L 2934, H01L 2348

Patent

active

040127648

ABSTRACT:
A semiconductor integrated circuit device comprises at least a transistor comprising a semiconductor substrate including at least a single collector region of a first conductivity type, a plurality of base regions of a second conductivity type formed in the collector region, and emitter regions of the first conductivity type respectively formed in the base regions of the second conductivity type. The second conductivity type base regions are electrically connected in common with one another and the first conductivity type emitter regions are electrically connected in common with one another. A multilayer interconnection structure is employed so that the density of integration of the semiconductor integrated circuit device is high.

REFERENCES:
patent: 3587052 (1971-06-01), Metcalf
patent: 3593068 (1971-07-01), Rosier
patent: 3631307 (1971-12-01), Naugler

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