Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2009-12-14
2011-11-15
Vanore, David A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000, C250S398000, C250S492300
Reexamination Certificate
active
08058631
ABSTRACT:
A semiconductor manufacturing includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-θ directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.
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Niwayama Masahiko
Yoneda Kenji
McDermott Will & Emery LLP
Panasonic Corporation
Vanore David A
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