Magnetoresistive device of the CPP type, and magnetic disk...

Details Magnetoresistive device of the CPP type, and magnetic disk... Magnetoresistive device of the CPP type, and magnetic disk...

2008-10-21

2011-10-04

Lam, David (Department: 2827)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324000, C360S324110, C360S324120

Reexamination Certificate

active

08031444

ABSTRACT:
The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.

REFERENCES:
patent: 7948717 (2011-05-01), Yuasa et al.
patent: 2008/0170336 (2008-07-01), Tsuchiya et al.
patent: 2003-8102 (2003-01-01), None
patent: 2004-193240 (2004-07-01), None
patent: 2008-177271 (2008-07-01), None

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