Semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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Details

C257S099000, C257SE33066, C257SE33072

Reexamination Certificate

active

08035124

ABSTRACT:
A semiconductor light emitting device (A) includes a semiconductor light emitting element (2) including a light emitting layer (22), a lead (1) formed with a reflector (11) that surrounds the semiconductor light emitting element (2), a light transmitting resin (4) covering the semiconductor light emitting element (2). The reflector (11) of the lead (1) includes a recess (12) at the bottom surface. The semiconductor light emitting element (2) is mounted to a bottom surface of the recess (12), with the light emitting layer (22) positioned outside the recess (12). A highly heat conductive material (3) having a thermal conductivity higher than that of the light transmitting resin (4) is loaded between the semiconductor light emitting element (2) and the recess (12).

REFERENCES:
patent: 6091084 (2000-07-01), Fujii
patent: 55-123181 (1980-09-01), None
patent: 62-162860 (1987-07-01), None
patent: 1-167065 (1989-11-01), None
patent: 3-67459 (1991-07-01), None
patent: 2003-11415 (2003-01-01), None
patent: 2006-286837 (2006-10-01), None
patent: 2006-303184 (2006-11-01), None

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