Solid state image pickup device with first and second...

Television – Camera – system and detail – Combined image signal generator and general image signal...

Reexamination Certificate

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C348S299000, C348S300000

Reexamination Certificate

active

08063958

ABSTRACT:
An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

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Machine English Translation for JP 2006-217410 A (Published: Aug. 17, 2006).
Sugawa, S. et al., “A 100dB Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor”, 2005 IEEE International Solid-State Circuits Conference, pp. 352,353 and 603 (Feb. 8, 2005).

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