Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2009-09-18
2011-10-25
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S786000
Reexamination Certificate
active
08044522
ABSTRACT:
A semiconductor device includes a substrate; and a chip formed on the substrate and electrically connected to the substrate by a wire. The chip includes a wiring layer electrically connected to the wire; and a protective layer formed on the wiring layer. The wiring layer includes a wiring portion having the protective layer formed in an upper layer thereof and being electrically connected to another layer at a lower layer thereof; a bonding portion connected to one end of the wire at an exposed surface thereof, the exposed surface not having the protective layer formed in an upper layer thereof; and a connecting portion configured to join the wiring portion and the bonding portion. The connecting portion includes an etched portion formed by digging out the wiring layer.
REFERENCES:
patent: 6727590 (2004-04-01), Izumitani et al.
patent: 2003/0151149 (2003-08-01), Ichikawa
patent: 2008/0128826 (2008-06-01), Fukamizu et al.
patent: 2010/0159690 (2010-06-01), Kasaoka et al.
patent: 2010/0320600 (2010-12-01), Pratt
patent: 3-227540 (1991-10-01), None
patent: 2005-223172 (2005-08-01), None
Clark S. V
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4289221