Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-03-27
2011-11-15
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE47001
Reexamination Certificate
active
08058636
ABSTRACT:
A nonvolatile memory apparatus includes a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes in a state where the variable resistance layer is in the low-resistance state is RL, a resistance value between the electrodes in a state where the variable resistance layer is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting the first terminal to the second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0satisfies RL<R0.
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Fujii Satoru
Muraoka Shunsaku
Osano Koichi
McDermott Will & Emery LLP
Panasonic Corporation
Soward Ida M
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