Semiconductor device

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Reexamination Certificate

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C235S451000, C235S375000

Reexamination Certificate

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08047442

ABSTRACT:
A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.

REFERENCES:
patent: 5605847 (1997-02-01), Zhang
patent: 7332381 (2008-02-01), Maruyama et al.
patent: 7968983 (2011-06-01), Urushihata
patent: 2003/0214006 (2003-11-01), Nakamura et al.
patent: 2004/0077134 (2004-04-01), Takayama et al.
patent: 2004/0222533 (2004-11-01), Nakamura et al.
patent: 2007/0212853 (2007-09-01), Maruyama et al.
patent: 2008/0191214 (2008-08-01), Hotta
patent: 2009/0140255 (2009-06-01), Kimura et al.
patent: 2006-232449 (2006-09-01), None
patent: 2007-150179 (2007-06-01), None
patent: 4015002 (2007-11-01), None

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