Method of manufacturing semiconductor device on which a...

Details Method of manufacturing semiconductor device on which a... Method of manufacturing semiconductor device on which a...

2008-03-21

2011-10-18

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S647000, C257SE21540

Reexamination Certificate

active

08039358

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a trench on a semiconductor substrate to define a first and a second element regions; burying a first oxide film in the trench; forming a second oxide film on surfaces of the first and second element regions; performing a first ion doping using a first mask which is exposing a first region containing the first element region and a part of the first oxide; performing a second ion doping using a second mask which is exposing a second region containing the second element region and a part of the first oxide film; and removing the second oxide film formed in the first element region and the second element region by etching, and the first oxide film is selectively thinned using the first or second mask after performing the first or second ion doping.

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Korean Office Action dated Oct. 18, 2010, issued in corresponding Korean Patent Application No. 10-2008-0028928.
Korean Office Action dated Sep. 14, 2010, issued in corresponding Korean Patent Application No. 10-2010-0056228.

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