Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-02-28
2011-10-25
Kim, Jay C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257S296000, C257S298000, C257S903000, C257SE21661, C257SE21662, C257SE21680, C257SE27098, C365S148000, C365S163000, C365S182000
Reexamination Certificate
active
08044489
ABSTRACT:
A semiconductor device having a phase-change memory cell comprises an interlayer dielectric film formed of, for example, SiOF formed on a select transistor formed on a main surface of a semiconductor substrate, a chalcogenide material layer formed of, for example, GeSbTe extending on the interlayer dielectric film, and a top electrode formed on the chalcogenide material layer. A fluorine concentration in an interface between the interlayer dielectric film and the chalcogenide material layer is higher than a fluorine concentration in an interface between the chalcogenide material layer and the top electrode.
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Stefan Lai et al, “OUM-A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, Technical Digest of International Electron Device Meeting, 2001, p. 803-806.
Kim Jay C
Mattingly & Malur, P.C.
Renesas Electronics Corporation
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