Methods of atomic layer deposition using hafnium and...

Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition

Reexamination Certificate

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C427S248100

Reexamination Certificate

active

08039062

ABSTRACT:
Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II:wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III:wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

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