Quantitative evaluation device and method of atomic vacancy...

Measuring and testing – Vibration – By mechanical waves

Reexamination Certificate

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C073S606000, C073S632000

Reexamination Certificate

active

08037761

ABSTRACT:
There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating means2for applying an external magnetic field to a silicon sample5cut out from a given site of a silicon wafer, a temperature controlling means3capable of cooling the silicon sample5to a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting means4for oscillating ultrasonic pulse to the surface of the silicon sample5and propagating the oscillated ultrasonic pulse into the silicon sample5and detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducer8having properties capable of following to an expansion of the silicon sample5at the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample5.

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