Procedure for obtaining nanotube layers of carbon with...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material

Reexamination Certificate

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C438S618000, C438S642000, C438S643000, C257SE51038, C257SE51040, C977S700000, C977S742000, C977S855000

Reexamination Certificate

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08039380

ABSTRACT:
The present invention relates to a process for producing a carbon nanotube (CNT) mat on a conductive or semiconductor substrate. According to this process, a catalytic complex comprising at least one metal layer is firstly deposited on said substrate. Said metal layer then undergoes an oxidizing treatment. Finally, carbon nanotubes are grown from the metal layer thus oxidized. The present invention also relates to a process for producing a via using said CNT mat production process.

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Qian Wen et al., “Oxygen-assisted Synthesis of SWNTs from Methane Decomposition”, Nanotechnology, IOP, Bristol, GB, vol. 18, No. 21, pp. 1-6 (May 30, 2007).
Guofang Zhong et al., “Growth Kinetics of 0.5cm Vertically Aligned Single-Walled Carbon Nanotubes”, Chem. B. (Letters), 111(8), pp. 1907-1910 (Feb. 6, 2007).

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