Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-01

2011-11-08

Hess, Daniel (Department: 2876)

Registers

Records

Conductive

C235S487000

Reexamination Certificate

active

08052059

ABSTRACT:
An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit104, but rather an output VDD0of a rectifier circuit portion103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

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Invitation to Pay Additional Fees (Application No. PCT/JP2007/069327) Dated Oct. 30, 2007.
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Written Opinion (Application No. PCT/JP2007/069327) dated Jan. 22, 2008.
Chinese Office Action (Application No. 200780036911.8) Dated May 25, 2011.

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