Method of programming nonvolatile memory device

Details Method of programming nonvolatile memory device Method of programming nonvolatile memory device

2009-01-28

2011-11-01

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

Reexamination Certificate

active

08050097

ABSTRACT:
According to an aspect of a method of programming a nonvolatile memory device, a first program operation command is input, and a program operation is executed according to a program start voltage stored in a program start voltage storage unit. Here, a program voltage, which is applied at a time point at which a memory cell programmed higher than a verify voltage while the program operation is performed occurs for the first time, is updated to a program start voltage.

REFERENCES:
patent: 6567315 (2003-05-01), Takase et al.
patent: 7342825 (2008-03-01), Takeuchi et al.
patent: 2010/0020602 (2010-01-01), Baek et al.
patent: 2010/0232228 (2010-09-01), Jeon et al.
patent: 2011/0026331 (2011-02-01), Dong et al.
patent: 2011/0051520 (2011-03-01), Kim
patent: 1020050073293 (2005-07-01), None
patent: 100836762 (2008-06-01), None
Notice of Preliminary Rejection Issued from Korean Intellectual Property Office on Jan. 26, 2010.

Affiliated with

Also associated with

Rating

Method of programming nonvolatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of programming nonvolatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of programming nonvolatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4274751