Method for reducing crystal defect of SIMOX wafer and SIMOX...

Details Method for reducing crystal defect of SIMOX wafer and SIMOX... Method for reducing crystal defect of SIMOX wafer and SIMOX...

2009-09-01

2011-10-04

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S407000, C257SE29109

Reexamination Certificate

active

08030183

ABSTRACT:
The method includes: a first step of colliding ions implanted from a surface of a SIMOX wafer into a silicon layer underneath a BOX layer against crystal defects to destroy the crystal defects; and a second step of heating the wafer obtained in the first step to recrystallize the silicon layer. If the ions to be implanted into the silicon layer are oxygen ions, then the first step initiates ion implantation with the temperature of the SIMOX wafer being 50° C. or lower, and sets an ion dose to 5×1015atoms/cm2to 1.5×1016atoms/cm2and implantation energy to 150 keV or higher but not higher than 220 keV. Consequently, crystal defects present in the silicon layer underneath the BOX layer of the SIMOX wafer are reduced.

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J. Jablonski et al., “Gettering Layer Formation in Low-Dose SIMOX Wafers”, Proceedings 1995 IEE International SOI Conference, Oct. 1995, pp. 34-35.

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