Power semiconductor module and fabrication method

Details Power semiconductor module and fabrication method Power semiconductor module and fabrication method

2006-04-07

2011-11-01

Richards, N. Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S336000, C257S773000, C257SE23141

Reexamination Certificate

active

08049338

ABSTRACT:
A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a thickness sufficient to carry power currents and a control coupling portion having a thickness thinner than that of the power coupling portion; and a semiconductor power device physically coupled to the interconnect layer and electrically coupled to the power coupling portion of the electrical conductor.

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patent: 6396153 (2002-05-01), Fillion et al.
patent: 6410356 (2002-06-01), Wojnarowski et al.
patent: 2006/0118815 (2006-06-01), Otremba et al.
patent: 2007/0057284 (2007-03-01), Casey et al.
U.S. Appl. No. 10/998,798, filed Nov. 24, 2004, title: “Power Module, Phase Leg, and Three-Phase Inverter”.

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