Field-effect transistor and method of manufacturing the same

Details Field-effect transistor and method of manufacturing the same Field-effect transistor and method of manufacturing the same

2009-07-30

2011-11-22

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257SE29320, C438S574000

Reexamination Certificate

active

08063420

ABSTRACT:
A field-effect transistor with improved moisture resistance without an increase in gate capacitance, and a method of manufacturing the field-effect transistor are provided. The field-effect transistor includes: a T-shaped gate electrode on a semiconductor layer; and a first highly moisture-resistant protective film including one of an insulating film and an organic film having high etching resistance, the first highly moisture-resistant protective film being located above the T-shaped gate electrode, over all of a region in which the T-shaped gate electrode is located. A cavity is located between the semiconductor layer and the first highly moisture-resistant protective film, below a canopy of the T-shaped gate electrode. An end surface of the cavity is closed by a second highly moisture-resistant film.

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Amasuga et al., “A High Power Density TaN/Au T-gate pHEMT with High Humidity Resistance for Ka-Band Applications”, IEEE MTT-S International Microwave Symposium Digest, pp. 831-834, (2005).

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